Depth profiling a III–V multilayered structure with an excimer laser

Abstract A multilayered structure of GaAs and AlGaAs was depth profiled using the technique of digital etching. A single excimer laser (KrF) was used to control the etch rate and to identify each layer by monitoring the Ga ions generated during the desorption process. The Ga ions were the only ions ... Ausführliche Beschreibung

1. Person: Bourne, O. L.
Weitere Personen: Hart, D'Arcy; Rayner, D. M.; Hackett, P. A.
Quelle: in Applied physics Vol. 59 (1994), p. 295-297
Weitere Artikel
Format: Online-Artikel
Genre: 81.60, 82.65, 82.80
Sprache: English
Veröffentlicht: 1994
Beschreibung: Online-Ressource
Online Zugang: Online
Volltext
Tags: Hinzufügen
Keine Tags. Fügen Sie den ersten Tag hinzu!
Anmerkung: Copyright: Copyright 1994 Springer-Verlag
Zusammenfassung: Abstract A multilayered structure of GaAs and AlGaAs was depth profiled using the technique of digital etching. A single excimer laser (KrF) was used to control the etch rate and to identify each layer by monitoring the Ga ions generated during the desorption process. The Ga ions were the only ions observed and were only generated when the photon flux was in the GaAs layer. The etch rate, 0.9 monolayers (2.5 Å) per pulse, was constant with depth. The overall layer recognition resolution was 45 monolayers.
ISSN: 1432-0630

Ähnliche Einträge

Keine ähnlichen Titel gefunden

Privacy Notice Ask a Librarian New Acquisitions